wisdomchina
05-27-2010, 09:07 PM
Edited by seekic.com,the leading IC purchasers' best choice of platform for one-stop valued service!
Description:
The 2N60 (http://www.seekic.com/icdata/2N60.html) is the abbreviation of UTC2N60. This device is designed as the high voltage and high current power MOSFET that have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
Features of the UTC2N60 are:(1)improved dv/dt capability, high ruggedness;(2)avalanche energy specified;(3)fast switching capability;(4)low reverse transfer capacitance (CRSS=typical 5.0 pF);(5)ultra low gate charge (typical 9.0 nC);(6)RDS(ON)=3.8Ω @VGS=10 V.
The absolute maximum ratings of the UTC2N60 can be summarized as:(1)drain-source voltage:600 V;(2)gate-source voltage:±30 V;(3)avalanche current:2.0 A;(4)continuous drain current (Tc=25°C):2.0 A;(5)continuous drain current (Tc=100°C):1.26 A;(6)pulsed drain current:8 A;(7)avalanche energy single pulsed:140 mJ;(8)avalanche energy repetitive:4.5 mJ;(9)peak diode recovery dv/dt:4.5 V/ns;(10)power dissipation:45 W;(11)junction temperature:+150 ℃;(12)storage temperature:-55 to +150 ℃;(13)operating temperature:-55 to +150 ℃.
Description:
The 2N60 (http://www.seekic.com/icdata/2N60.html) is the abbreviation of UTC2N60. This device is designed as the high voltage and high current power MOSFET that have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
Features of the UTC2N60 are:(1)improved dv/dt capability, high ruggedness;(2)avalanche energy specified;(3)fast switching capability;(4)low reverse transfer capacitance (CRSS=typical 5.0 pF);(5)ultra low gate charge (typical 9.0 nC);(6)RDS(ON)=3.8Ω @VGS=10 V.
The absolute maximum ratings of the UTC2N60 can be summarized as:(1)drain-source voltage:600 V;(2)gate-source voltage:±30 V;(3)avalanche current:2.0 A;(4)continuous drain current (Tc=25°C):2.0 A;(5)continuous drain current (Tc=100°C):1.26 A;(6)pulsed drain current:8 A;(7)avalanche energy single pulsed:140 mJ;(8)avalanche energy repetitive:4.5 mJ;(9)peak diode recovery dv/dt:4.5 V/ns;(10)power dissipation:45 W;(11)junction temperature:+150 ℃;(12)storage temperature:-55 to +150 ℃;(13)operating temperature:-55 to +150 ℃.